Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories
نویسندگان
چکیده
منابع مشابه
Nanoionics-based resistive switching memories.
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...
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Metal oxide based resistive switching memories, also known as resistive-RAM (RRAM), have shown promising characteristics for next-generation nonvolatile memory and reconfigurable logic applications. These devices can be electrically switched between a low-resistance-state (LRS) and high-resistance-state (HRS) over many cycles. Fig. 1(a) illustrates the resistive switching terminologies and the ...
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We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltag...
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Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of...
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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) bi...
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ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2019
ISSN: 2199-160X,2199-160X
DOI: 10.1002/aelm.201900979